IndiumV3, Chine, Analysis, bibRecord, 000415

Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells

Identifieur interne : 000415 ( Chine/Analysis ); précédent : 000414; suivant : 000416

Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells

Auteurs : RBID : Pascal:13-0225697

Descripteurs français

Pascal (Inist)
- Cellule solaire, Caractéristique capacité tension, Polymère, Fullerènes, Dopage, Mobilité dérive, Simulation numérique, Addition indium, Epaisseur, Couche mince, Mesure capacité électrique, Couche active, 8460J, 8105T, 8105U.
Wicri :
- concept : Polymère, Dopage.

English descriptors

KwdEn :
- Active layer, Capacitance measurement, Doping, Drift mobility, Fullerenes, Indium addition, Numerical simulation, Polymer, Solar cell, Thickness, Thin film, Voltage capacity curve.

Abstract

The application of Mott-Schottky analysis to capacitance-voltage measurements of polymer:fullerene solar cells is a frequently used method to determine doping densities and built-in voltages, which have important implications for understanding the device physics of these cells. Here we compare drift-diffusion simulations with experiments to explore the influence and the detection limit of doping in situations where device thickness and doping density are too low for the depletion approximation to be valid. The results of our simulations suggest that the typically measured values on the order of 5 _X 10¹⁶ cm^-3 for doping density in thin films of 100 nm or lower may not be reliably determined from capacitance measurements and could originate from a completely intrinsic active layer. In addition, we explain how the violation of the depletion approximation leads to a strong underestimation of the actual built-in voltage by the built-in voltage V_MS determined by Mott-Schottky analysis.

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Pascal:13-0225697

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells</title>
<author><name sortKey="Kirchartz, Thomas" uniqKey="Kirchartz T">Thomas Kirchartz</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Imperial College London</s1>
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<country>Royaume-Uni</country>
<wicri:noRegion>South Kensington SW7 2AZ</wicri:noRegion>
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<author><name>WEI GONG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics, Imperial College London</s1>
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<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Key Laboratory of Luminescence and Optical Information, Ministry of Education and Institute of Optoelectronics Technology, Beijing Jiaotong University</s1>
<s2>Beijing 100044</s2>
<s3>CHN</s3>
<sZ>2 aut.</sZ>
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<country>République populaire de Chine</country>
<placeName><settlement type="city">Pékin</settlement>
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</author>
<author><name sortKey="Hawks, Steven A" uniqKey="Hawks S">Steven A. Hawks</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of California, Los Angeles</s1>
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<author><name sortKey="Agostinelli, Tiziano" uniqKey="Agostinelli T">Tiziano Agostinelli</name>
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<author><name sortKey="Mackenzie, Roderick C I" uniqKey="Mackenzie R">Roderick C. I. Mackenzie</name>
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<author><name>YANG YANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of California, Los Angeles</s1>
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<author><name sortKey="Nelson, Jenny" uniqKey="Nelson J">Jenny Nelson</name>
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<seriesStmt><idno type="ISSN">1932-7447</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Active layer</term>
<term>Capacitance measurement</term>
<term>Doping</term>
<term>Drift mobility</term>
<term>Fullerenes</term>
<term>Indium addition</term>
<term>Numerical simulation</term>
<term>Polymer</term>
<term>Solar cell</term>
<term>Thickness</term>
<term>Thin film</term>
<term>Voltage capacity curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term>
<term>Caractéristique capacité tension</term>
<term>Polymère</term>
<term>Fullerènes</term>
<term>Dopage</term>
<term>Mobilité dérive</term>
<term>Simulation numérique</term>
<term>Addition indium</term>
<term>Epaisseur</term>
<term>Couche mince</term>
<term>Mesure capacité électrique</term>
<term>Couche active</term>
<term>8460J</term>
<term>8105T</term>
<term>8105U</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Polymère</term>
<term>Dopage</term>
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<front><div type="abstract" xml:lang="en">The application of Mott-Schottky analysis to capacitance-voltage measurements of polymer:fullerene solar cells is a frequently used method to determine doping densities and built-in voltages, which have important implications for understanding the device physics of these cells. Here we compare drift-diffusion simulations with experiments to explore the influence and the detection limit of doping in situations where device thickness and doping density are too low for the depletion approximation to be valid. The results of our simulations suggest that the typically measured values on the order of 5 <sub>X</sub>
 10<sup>16</sup>
 cm<sup>-3</sup>
 for doping density in thin films of 100 nm or lower may not be reliably determined from capacitance measurements and could originate from a completely intrinsic active layer. In addition, we explain how the violation of the depletion approximation leads to a strong underestimation of the actual built-in voltage by the built-in voltage V<sub>MS</sub>
 determined by Mott-Schottky analysis.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells</s1>
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<fC01 i1="01" l="ENG"><s0>The application of Mott-Schottky analysis to capacitance-voltage measurements of polymer:fullerene solar cells is a frequently used method to determine doping densities and built-in voltages, which have important implications for understanding the device physics of these cells. Here we compare drift-diffusion simulations with experiments to explore the influence and the detection limit of doping in situations where device thickness and doping density are too low for the depletion approximation to be valid. The results of our simulations suggest that the typically measured values on the order of 5 <sub>X</sub>
 10<sup>16</sup>
 cm<sup>-3</sup>
 for doping density in thin films of 100 nm or lower may not be reliably determined from capacitance measurements and could originate from a completely intrinsic active layer. In addition, we explain how the violation of the depletion approximation leads to a strong underestimation of the actual built-in voltage by the built-in voltage V<sub>MS</sub>
 determined by Mott-Schottky analysis.</s0>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>12</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Capa activa</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>8460J</s0>
<s4>INC</s4>
<s5>71</s5>
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<fC03 i1="14" i2="X" l="FRE"><s0>8105T</s0>
<s4>INC</s4>
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<fC03 i1="15" i2="X" l="FRE"><s0>8105U</s0>
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Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells

Sensitivity of the Mott-Schottky Analysis in Organic Solar Cells

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri